15

The influence of deep-level impurities on the admittance of GaP p +–n junctions

Year:
1975
Language:
english
File:
PDF, 455 KB
english, 1975
16

Capacitance–frequency dispersion and electroluminescence efficiency of GaP p–n junctions

Year:
1978
Language:
english
File:
PDF, 486 KB
english, 1978
17

Scanning electron microscopic investigations of GaP

Year:
1978
Language:
english
File:
PDF, 634 KB
english, 1978
18

VP Related Defects in Diffused GaP:N Diodes

Year:
1984
Language:
english
File:
PDF, 785 KB
english, 1984
20

The Ge-Related DX Level in Sn/Ge-Doped AlxGa1−xAs Heterojunctions Grown by LPE

Year:
1986
Language:
english
File:
PDF, 378 KB
english, 1986
22

Elektrische und optische Eigenschaften von Cu2S-Aufdampfschichten

Year:
1968
Language:
german
File:
PDF, 136 KB
german, 1968
26

Some remarks about the evaluation of measured Hall data on GaP

Year:
1978
Language:
english
File:
PDF, 210 KB
english, 1978